FGA15N120ANTDTU-F109, БТИЗ транзистор, 30 А, 2.3 В, 186 Вт

306,90 ₽

Артикул: 383862baf632 Категория:

      Описание

      FGA15N120ANTDTU-F109, БТИЗ транзистор, 30 А, 2.3 В, 186 Вт The FGA15N120ANTDTU_F109 is a 1200V NPT Trench IGBT. It is in a non-punch through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability This product is general usage and suitable for many different applications.

      • Low saturation voltage
      • Low switching loss
      • Extremely enhanced avalanche capability

      Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные

      Детали
      Бренд

      ON SEMICONDUCTOR
      Максимальная Рабочая Температура

      150 C
      Количество Выводов

      3вывод(-ов)
      Напряжение Коллектор-Эмиттер

      1.2кВ
      Стандарт Корпуса Транзистора

      to-3p
      Рассеиваемая Мощность

      186Вт
      DC Ток Коллектора

      30а
      Наименование

      FGA15N120ANTDTU-F109, БТИЗ транзистор, 30 А, 2.3 В, 186 Вт, 1.2 кВ, TO-3P, 3 вывод(-ов)